november 2012 hvm-1057-e 1 < hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules CM1200HC-90R ? i c 1200a ? v ces 4500v ? 1-element in a pack ? insulated type ? lpt-igbt / soft recovery diode ? alsic baseplate application traction drives, high reliability c onverters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 hvm-1057-e 2 maximum ratings symbol item conditions ratings unit v ge = 0v, t j = ? 40?+125c 4500 v ces collector-emitter voltage v ge = 0v, t j = ? 50c 4400 v v ges gate-emitter voltage v ce = 0v, t j = 25c 20 v i c dc, t c = 85c 1200 a i crm collector current pulse (note 1) 2400 a i e dc 1200 a i erm emitter current (note 2) pulse (note 1) 2400 a p tot maximum power dissipation (note 3) t c = 25c, igbt part 12500 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1 min. 6000 v v e partial discharge extinction voltage rms, sinusoidal, f = 60hz, q pd 10 pc 3500 v t j junction temperature ? 50 ~ +150 c t jop operating junction temperature ? 50 ~ +125 c t stg storage temperature ? 55 ~ +125 c t psc short circuit pulse width v cc = 3200v, v ce v ces , v ge =15v, t j =125c 10 ? s electrical characteristics limits symbol item conditions min typ max unit t j = 25c D D 16.0 i ces collector cutoff current v ce = v ces , v ge = 0v t j = 125c D 16.0 D ma v ge(th) gate-emitter threshold voltage v ce = 10 v, i c = 120 ma, t j = 25c 5.8 6.3 6.8 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? 0.5 D 0.5 a c ies input capacitance D 175.0 D nf c oes output capacitance D 11.0 D nf c res reverse transfer capacitance v ce = 10 v, v ge = 0 v, f = 100 khz t j = 25c D 5.0 D nf q g total gate charge v cc = 2800v, i c = 1200a, v ge = 15v D 13.5 D c t j = 25c D 3.50 D v cesat collector-emitter saturation voltage i c = 1200 a (note 4) v ge = 15 v t j = 125c D 4.40 5.10 v t j = 25c D 1.00 D t d(on) turn-on delay time t j = 125c D 0.95 1.50 s t j = 25c D 0.28 D t r turn-on rise time t j = 125c D 0.30 0.50 s t j = 25c D 4.30 D e on(10%) turn-on switching energy (note 5) t j = 125c D 5.10 D j t j = 25c D 4.60 D e on turn-on switching energy (note 6) v cc = 2800 v i c = 1200 a v ge = 15 v r g(on) = 2.7 ? l s = 150 nh inductive load t j = 125c D 5.50 D j/p t j = 25c D 3.60 D t d(off) turn-off delay time t j = 125c D 3.80 5.00 s t j = 25c D 0.35 D t f turn-off fall time t j = 125c D 0.45 1.00 s t j = 25c D 2.90 D e off(10%) turn-off switching energy (note 5) t j = 125c D 3.85 D j t j = 25c D 3.20 D e off turn-off switching energy (note 6) v cc = 2800 v i c = 1200 a v ge = 15 v r g(off) = 10 ? l s = 150 nh inductive load t j = 125c D 4.30 D j
< hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 hvm-1057-e 3 electrical characteristics (continuation) limits symbol item conditions min typ max unit t j = 25c ? 2.50 ? v ec emitter-collector voltage (note 2) i e = 1200 a (note 4) v ge = 0 v t j = 125c ? 2.80 3.40 v t j = 25c ? 0.70 ? t rr reverse recovery time (note 2) t j = 125c ? 0.90 ? s t j = 25c ? 1100 ? i rr reverse recovery current (note 2) t j = 125c ? 1200 ? a t j = 25c ? 1000 ? q rr reverse recovery charge (note 2) t j = 125c ? 1500 ? c t j = 25c ? 1.30 ? e rec(10%) reverse recovery energy (note 2) (note 5) t j = 125c ? 2.10 ? j t j = 25c ? 1.55 ? e rec reverse recovery energy (note 2) (note 6) v cc = 2800 v i c = 1200 a v ge = 15 v r g(on) = 2.7 ? l s = 150 nh inductive load t j = 125c ? 2.40 ? j thermal characteristics limits symbol item conditions min typ max unit r th(j-c)q junction to case, igbt part D D 10.0 k/kw r th(j-c)d thermal resistance junction to case, fwdi part D D 19.0 k/kw r th(c-s) contact thermal resistance case to heat sink, ? grease = 1w/m k, d (c-s) = 100 ? m D 6.0 D k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m8 : main terminals screw 7.0 D 22.0 nm m s m6 : mounting screw 3.0 D 6.0 nm m t mounting torque m4 : auxiliary terminals screw 1.0 D 3.0 nm m mass D 1.2 D kg cti comparative tracking index 600 D D D d a clearance 19.5 D D mm d s creepage distance 32.0 D D mm l p ce parasitic stray inductance D 11.0 D nh r cc?+ee? internal lead resistance t c = 25c D 0.12 D m ? r g internal gate resistance t c = 25c D 1.7 D ? ? note1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating. 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwd i ). 3. junction temperature (t j ) should not exceed t jmax rating (150c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. definition of all items is according to iec 60747, unless otherwise specified.
< hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 hvm-1057-e 4 performance curves output characteristics (typical) 0 500 1000 1500 2000 2500 02468 collector - emitter voltage [v] coll ector current [a] v ge = 10v v ge = 11v v ge = 15v v ge = 13v tj = 25c v ge = 16v collector-emitter saturation voltag e characteristics (typical) 0 500 10 00 15 00 20 00 25 00 02468 collector-emitter saturation voltage [v] coll ector current [a] v ge = 15 v tj = 1 25 c tj = 25c transfer characteristics (typical) 0 50 0 1000 1500 2000 2500 04 81216 gate - emitter voltage [v] coll ector current [a] tj = 25c v ce = v ge tj = 1 25 c free-wheel diode forward characteristics (typical) 0 500 10 00 15 00 20 00 25 00 012345 emitter-coll ector voltage [v] emi tter current [a] tj = 25c tj = 125c
< hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 hvm-1057-e 5 performance curves capacitance characteristics (typical) 1 10 100 10 00 0.1 1 10 100 collector-emitter voltage [v] capa citance [nf] cies v ge = 0v, tj = 25c f = 10 0khz co es cre s half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 12 14 16 0 5 00 1 000 1 50 0 200 0 25 00 collec tor curre nt [a] switching energies [j/pulse] erec v cc = 280 0v, v ge = 1 5v r g( on) = 2. 7 ? , r g(off ) = 10 ? l s = 15 0nh , t j = 125 c i ndu cti ve lo ad eoff eon gate charge characteristics (typical) -1 5 -1 0 -5 0 5 10 15 20 0 5 10 15 20 gate charge [ c] gate-emitter voltage [v] v ce = 28 00v, i c = 1 200 a tj = 2 5 c half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 12 012345 gate resistor [ohm] switching energies [j/pulse] ere c v cc = 28 00v, i c = 1 200 a v ge = 1 5v, l s = 1 50n h t j = 1 25 c, i nd uct ive l oad eon
< hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 hvm-1057-e 6 performance curves half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 12 05101520 gate resistor [ohm] switching energies [j/pulse] v cc = 28 00 v, i c = 1 200 a v ge = 15v, l s = 1 50n h tj = 1 25 c, i n duct ive l oa d eoff free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 10 0 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1 000 1 000 0 reverse recovery current [a] trr irr v cc = 28 00 v, v ge = 15v r g(on) = 2.7 ? , l s = 150 nh tj = 1 25 c, in ductive l oa d half-bridge switching time characteristics (typical) 0.0 1 0.1 1 10 10 0 10 0 10 00 1 00 00 coll ector current [a] switching times [s] v cc = 2 800 v, v ge = 15v r g(on ) = 2. 7 ? , r g( off) = 10 ? l s = 150nh, tj = 125c in ducti ve loa d tr td(on) td(off) tf reverse bias safe operating area (rbsoa) 0 500 10 00 15 00 20 00 25 00 30 00 0 10002000300040005000 collector-emitter voltage [v] coll ector current [a] v cc ? 32 00 v, v ge = 15v tj = 125 c, r g(o ff) = 10 ?
< hvigbt modules > CM1200HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 hvm-1057-e 7 performance curves short circuit safe operating area (scsoa) 0 2 4 6 8 10 12 0 10 00 2 000 3 00 0 400 0 50 00 collector-emitter vol tage [v] coll ector current [ka] v cc ? 32 00v, v ge = 1 5v tj = 125c, r g(on) = 2.7 ? , r g( off) = 1 0 ? transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0. 001 0.0 1 0.1 1 1 0 ti me [s ] normalized transient thermal impedance rt h(j-c)q = 10 .0 k/kw rth(j-c)r = 1 9.0k/kw free-wheel diode reverse recovery safe operating area (rrsoa) 0 500 10 00 15 00 20 00 25 00 30 00 0 10002000300040005000 emitte r-collector voltage [v] reverse recovery current [a] v cc ? 32 00 v, di /d t < 6 ka/ s tj = 125 c ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? exp1 rz i t n 1i i )cj(th )t( ? 1234 r i [k/kw] : 0.0096 0.1893 0.4044 0.3967 t i [sec] : 0.0001 0.0058 0.0602 0.3512
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